X-Fab adds 375V nmos and pmos super-junction transistors to BCD chip process

The second generation of its XT018 super-junction high-voltage primitive devices, they cover 45 to 375V in one process module and are aimed at applications like medical ultrasound transmitter-receiver ICs and AC line-powered IoT sensors.

The complementary nmos-pmos devices qualified for -40 to +175°C and can be incorporated into automotive AEC-Q100 Grade 0 products.

“For the first time, customers are able to design highly integrated ICs which can be directly powered from 230V ac mains,” according to the company. “This opens up an alternative power option to the increasing number of IoT edge nodes now starting to be deployed. Combined with the qualified XT018 eFlash, smart IoT device implementations are also possible.”

The company claims that devices made on BCD-on-SoI are effectively latch-up-free, and have enhanced EMC performance and handle below-ground transients better than bulk BCD devices.

For medical ultrasound ICs, X-Fab has also released a low Rds(on) pmos module with new pmos primitive devices operating up to 235V. They are said to have 40% lower on-resistance compared with regular 2nd generation super-junction pmos devices. The idea is to better-match the resistance and Id(sat) of the on-chip nmos power transistors.