| Manufacturer Part Number : | EPC2100ENG |
|---|---|
| RoHs Status : | Lead free / RoHS Compliant |
| Manufacturer/Brand : | EPC |
| Stock Condition : | In stock |
| Description : | TRANS GAN 2N-CH 30V BUMPED DIE |
| Ship From : | Hong Kong |
| Datasheets : | EPC2100ENG.pdf |
| Shipment Way : | DHL/Fedex/TNT/UPS/EMS |
| Part No. | EPC2100ENG |
|---|---|
| Manufacturer | EPC |
| Description | TRANS GAN 2N-CH 30V BUMPED DIE |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | In stock |
| Datasheets | EPC2100ENG.pdf |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V |
| Power - Max | - |
| Packaging | Tray |
| Package / Case | Die |
| Other Names | 917-EPC2100ENG EPC2100ENGR_H1 EPC2100ENGRH1 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Ta) |
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