| Manufacturer Part Number : | EPC2101ENG |
|---|---|
| RoHs Status : | Lead free / RoHS Compliant |
| Manufacturer/Brand : | EPC |
| Stock Condition : | In stock |
| Description : | TRANS GAN 2N-CH 60V BUMPED DIE |
| Ship From : | Hong Kong |
| Datasheets : | EPC2101ENG.pdf |
| Shipment Way : | DHL/Fedex/TNT/UPS/EMS |
| Part No. | EPC2101ENG |
|---|---|
| Manufacturer | EPC |
| Description | TRANS GAN 2N-CH 60V BUMPED DIE |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | In stock |
| Datasheets | EPC2101ENG.pdf |
| Vgs(th) (Max) @ Id | 2.5V @ 2mA |
| Supplier Device Package | Die |
| Series | eGaN® |
| Rds On (Max) @ Id, Vgs | 11.5 mOhm @ 20A, 5V |
| Power - Max | - |
| Packaging | Tray |
| Package / Case | Die |
| Other Names | 917-EPC2101ENG EPC2101ENGR_H5 EPC2101ENGRH5 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 2.7nC @ 5V |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Detailed Description | Mosfet Array 2 N-Channel (Half Bridge) 60V 9.5A, 38A Surface Mount Die |
| Current - Continuous Drain (Id) @ 25°C | 9.5A, 38A |
EPC2102GAN TRANS SYMMETRICAL HALF BRIDGEPC2102ENGRTGANFET 2 N-CHANNEL 60V 23A DIEEPC2088TRANS GAN 100V .0032OHM BMP DIEEPC2100GAN TRANS ASYMMETRICAL HALF BRID
EPC2102ENGTRANS GAN 2N-CH 60V BUMPED DIEEPC2100ENGRTGANFET 2 N-CH 30V 9.5A/38A DIE
EPC2100ENGTRANS GAN 2N-CH 30V BUMPED DIEEPC2101ENGRTGAN TRANS ASYMMETRICAL HALF BRIDEPC2103GAN TRANS SYMMETRICAL HALF BRIDGEPC2101GAN TRANS ASYMMETRICAL HALF BRID